PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN9R0-25MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 55 A
• Resistance Drain-source Rds (on): 11.3 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 45 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN9R0-25MLC
Product data sheet
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(S)
g
60
45
30
15
fs
30
25
20
15
10
0
5
0
drain current; typical values
of drain current; typical values
Forward transconductance as a function of
0
0
2.6
15
15
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
2.8
30
30
3
45
45
V
GS
All information provided in this document is subject to legal disclaimers.
003aaj798
003aaj802
I
(V) = 10
D
I
D
(A)
(A)
3.5
4.5
60
60
Rev. 3 — 15 June 2012
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
a
D
1.5
0.5
60
45
30
15
0
2
1
0
-60
function of gate-source voltage; typical values
factor as a function of junction temperature
Transfer characteristics; drain current as a
0
PSMN9R0-25MLC
T
1
0
j
= 150 °C
60
2
T
j
= 25 °C
10V
120
3
© NXP B.V. 2012. All rights reserved.
V
V
GS
003aaj799
003aaj803
T
GS
j
=4.5V
(°C)
(V)
180
4
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