PSMN9R0-25YLC NXP Semiconductors, PSMN9R0-25YLC Datasheet

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN9R0-25YLC

Manufacturer Part Number
PSMN9R0-25YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
D
j
DS
tot
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN9R0-25YLC
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 1 November 2011
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
DC-to-DC converters
Load switching
Conditions
25 °C ≤ T
T
T
V
see
V
see
V
see
mb
mb
GS
GS
GS
Figure 12
Figure 12
Figure
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
j
≤ 175 °C
14; see
D
D
D
GS
= 15 A; T
= 15 A; T
= 15 A; V
Figure 2
= 10 V; see
Figure 15
j
j
DS
= 25 °C;
= 25 °C;
= 12 V;
Figure 1
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
Synchronous buck regulator
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
10.5
7.7
1.8
5.6
Max
25
46
34
175
12.3
9.1
-
-
Unit
V
A
W
°C
mΩ
mΩ
nC
nC

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PSMN9R0-25YLC Summary of contents

Page 1

... PSMN9R0-25YLC N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 November 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... T pulsed ° j(init) ≤ unclamped sup see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC Graphic symbol G mbb076 Version SOT669 Min Max - kΩ -20 20 Figure 1 ...

Page 3

... Fig (A) ( All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC 100 150 Normalized total power dissipation as a function of mounting base temperature 003aag196 (ms) AL 03na19 200 T (°C) mb © ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN9R0-25YLC Product data sheet Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC 003aag197 =10 μ 100 μ 100 (V) DS © ...

Page 5

... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN9R0-25YLC Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC Min Typ Max - 4.14 4.36 003aag198 tp δ ...

Page 6

... V; see Figure D DS see Figure MHz °C; see Figure 0.8 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC Min Typ Max 22 1.05 1.6 1. 100 - ...

Page 7

... Figure 18 003aag199 25 R DSon (m Ω 3.0 15 2.8 10 2.6 5 2.4 2 (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC Min Typ Max - 0. 8.6 - 003aag200 ...

Page 8

... Fig 9. 003aag203 V GS(th) (V) Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC 150 ° Transfer characteristics; drain current as a function of gate-source voltage; typical values ...

Page 9

... GS 3.5 4 (A) D Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC 2 a 4.5V 1.5 1 0 factor as a function of junction temperature (V) 8 20V ...

Page 10

... C rss (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC 150 ° 0.3 0.6 0.9 voltage; typical values 003a a f 444 ...

Page 11

... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...

Page 12

... NXP Semiconductors N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date PSMN9R0-25YLC v.2 20111101 • Modifications: Status changed from preliminary to product. • Various changes to content. PSMN9R0-25YLC v.1 20110712 PSMN9R0-25YLC Product data sheet Data sheet status ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 November 2011 PSMN9R0-25YLC Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN9R0-25YLC All rights reserved. Date of release: 1 November 2011 ...

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