PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN9R0-25MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 1.95 V
• Continuous Drain Current: 55 A
• Resistance Drain-source Rds (on): 11.3 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 45 W
• Factory Pack Quantity: 1500

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN9R0-25MLC
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
10
10
I
10
10
D
10
10
10
-1
-2
-1
1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
δ = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
-6
single shot
Parameter
thermal resistance from
junction to mounting base
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
10
-5
Limit R
DSon
= V
All information provided in this document is subject to legal disclaimers.
10
1
DS
-4
/ I
D
Conditions
see
Rev. 3 — 15 June 2012
Figure 5
10
-3
DC
10
10
-2
PSMN9R0-25MLC
Min
-
10
P
t
100 μs
1 ms
10 ms
100 ms
p
-1
=10 μs
V
t
Typ
3.1
p
DS
T
(V)
© NXP B.V. 2012. All rights reserved.
t
p
003aaj794
003aaj795
δ =
(s)
Max
3.32
t
T
p
t
10
1
2
K/W
Unit
4 of 14