PSMN9R0-25MLC,115 NXP Semiconductors, PSMN9R0-25MLC,115 Datasheet - Page 13

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PSMN9R0-25MLC,115

Manufacturer Part Number
PSMN9R0-25MLC,115
Description
MOSFET N-channel MOSFET logic level LFPAK33
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN9R0-25MLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
1.95 V
Continuous Drain Current
55 A
Resistance Drain-source Rds (on)
11.3 mOhms
Mounting Style
SMD/SMT
Package / Case
LFPAK33
Power Dissipation
45 W
Factory Pack Quantity
1500
NXP Semiconductors
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(a) shall use the product without NXP Semiconductors’ warranty of the
10. Contact information
For more information, please
For sales office addresses, please send an email
PSMN9R0-25MLC
Product data sheet
N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
visit:http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 June 2012
to:salesaddresses@nxp.com
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
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9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
Trademarks
PSMN9R0-25MLC
© NXP B.V. 2012. All rights reserved.
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