SQM100N04-3M5-GE3 Vishay/Siliconix, SQM100N04-3M5-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQM100N04-3M5-GE3
• Description: MOSFET 40V 100A 157W
• Manufacturer: Vishay/Siliconix

Specifications of SQM100N04-3M5-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 0.003 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-263
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 201 S
• Gate Charge Qg: 95.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 48 ns

THERMAL RATINGS (T
S12-1849-Rev. B, 30-Jul-12
0.0001
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.001
0.01
0.1
1
10
-4
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
0.1
10
1
0.01
10
-2
Limited by
* V
R
DS(on)
GS
T
Single Pulse
C
I
DM
= 25 °C
*
minimum V
V
0.1
DS
Limited
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Safe Operating Area
10
-1
GS
I
D
at which R
Limited
1
5
BVDSS Limited
DS(on)
1
10
is specified
www.vishay.com/doc?91000
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100 µs
100
10
SQM100N04-3m5
100
Vishay Siliconix
Document Number: 67005
1000