SQM100N04-3M5-GE3 Vishay/Siliconix, SQM100N04-3M5-GE3 Datasheet

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SQM100N04-3M5-GE3

Manufacturer Part Number
SQM100N04-3M5-GE3
Description
MOSFET 40V 100A 157W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SQM100N04-3M5-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
0.003 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-263
Fall Time
9 ns
Forward Transconductance Gfs (max / Min)
201 S
Gate Charge Qg
95.5 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
157 W
Rise Time
11 ns
Typical Turn-off Delay Time
48 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQM100N04-3M5-GE3
Manufacturer:
SILICON
Quantity:
3 400
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-1849-Rev. B, 30-Jul-12
PRODUCT SUMMARY
V
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
(A)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V)
() at V
G
Top View
TO-263
GS
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
www.vishay.com
D
= 10 V
S
b
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
G
N-Channel MOSFET
a
0.0030
Single
C
100
40
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
T
L = 0.1 mH
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
a
c
1
TO-263
SQM100N04-3m5-GE3
FEATURES
• TrenchFET
• Package with Low Thermal Resistance
• 100 % R
• AEC-Q101 Qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJC
I
I
AS
DS
GS
D
S
AS
D
stg
g
www.vishay.com/doc?91000
and UIS Tested
®
Power MOSFET
- 55 to + 175
d
LIMIT
LIMIT
± 20
0.95
SQM100N04-3m5
100
100
400
245
157
40
94
70
52
40
Vishay Siliconix
Document Number: 67005
UNIT
UNIT
°C/W
mJ
°C
W
V
A

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SQM100N04-3M5-GE3 Summary of contents

Page 1

... Package with Low Thermal Resistance 0.0030 • 100 % R and UIS Tested g 100 • AEC-Q101 Qualified Single • Material categorization: D For definitions of compliance please see www.vishay.com/doc?99912 S N-Channel MOSFET TO-263 SQM100N04-3m5-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C ...

Page 2

... MHz g t d(on 0.2   100 GEN d(off www.vishay.com/doc?91000 SQM100N04-3m5 Vishay Siliconix MIN. TYP. MAX. UNIT 2.5 3.0 3 ± 100 125 ° μ 175 ° 250 J 120 - - - 0.0022 0.0030  ...

Page 3

... 0.005 0.004 0.003 0.002 0.001 www.vishay.com/doc?91000 SQM100N04-3m5 Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 100 120 ...

Page 4

... ° 1 100 125 150 T - Junction Temperature (° www.vishay.com/doc?91000 SQM100N04-3m5 Vishay Siliconix = 150 ° °C J 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage ( 250 μ 100 125 150 175 T - Temperature (° ...

Page 5

... BVDSS Limited 0 Drain-to-Source Voltage ( minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) 5 www.vishay.com/doc?91000 SQM100N04-3m5 Vishay Siliconix 100 µ 100 ms 100 10 100 1000 Document Number: 67005 ...

Page 6

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67005. S12-1849-Rev. B, 30-Jul-12 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration (s) 6 www.vishay.com/doc?91000 SQM100N04-3m5 Vishay Siliconix Document Number: 67005 ...

Page 7

TO-263 (D PAK): 3-LEAD - - Detail “A” 0.010 SECTION A-A DETAIL A (ROTATED 90°) Document Number: 71198 Revison: 03-Jan-11 DIM. A ...

Page 8

RECOMMENDED MINIMUM PADS FOR D Return to Index Document Number: 73397 11-Apr-05 2 PAK: 3-Lead 0.420 (10.668) 0.135 (3.429) 0.200 (5.080) Recommended Minimum Pads Dimensions in Inches/(mm) AN826 Vishay Siliconix 0.145 (3.683) 0.050 (1.257) www.vishay.com 1 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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