SQM100N04-3M5-GE3 Vishay/Siliconix, SQM100N04-3M5-GE3 Datasheet - Page 2

• Manufacturer Part Number: SQM100N04-3M5-GE3
• Description: MOSFET 40V 100A 157W
• Manufacturer: Vishay/Siliconix

Specifications of SQM100N04-3M5-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 0.003 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-263
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 201 S
• Gate Charge Qg: 95.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 48 ns

Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1849-Rev. B, 30-Jul-12
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
c
b
c
a
www.vishay.com
c
c
c
c
c
a
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
C
= 25 °C, unless otherwise noted)
a
SYMBOL
R
V
I
t
t
C
I
I
C
V
D(on)
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
g
R
SM
t
oss
t
DS
rss
SD
iss
gd
fs
gs
r
f
g
g
b
V
V
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
D
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= 0 V
 100 A, V
2
V
V
V
DS
V
TEST CONDITIONS
V
DS
DD
DS
GS
I
F
= 0 V, V
= V
= 20 V, R
= 30 A, V
= 15 V, I
= 0, I
f = 1 MHz
GEN
GS
V
V
V
I
I
V
DS
DS
D
D
DS
, I
DS
D
= 30 A, T
= 30 A, T
= 10 V, R
GS
D
= 40 V, T
= 40 V, T
= 250 μA
= 20 V, I
= 25 V, f = 1 MHz
D
= 250 μA
L
V
GS
= ± 20 V
V
I
= 30 A
= 0.2 
DS
D
www.vishay.com/doc?91000
DS
= 0
= 30 A
= 40 V
5 V
J
J
g
J
J
D
= 125 °C
= 175 °C
= 125 °C
= 175 °C
= 1 
= 100 A
SQM100N04-3m5
MIN.
120
2.5
40
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Siliconix
Document Number: 67005
0.0022 0.0030
TYP.
6325
95.5
25.5
14.7
2.48
201
744
314
3.0
0.8
14
11
48
9
-
-
-
-
-
-
-
-
-
0.0049
0.0060
MAX.
± 100
7910
250
930
395
145
400
3.5
3.8
1.5
50
21
17
72
14
1
-
-
-
-
-
UNIT
nA
μA
pF
nC
ns


V
A
S
A
V