SQM100N04-3M5-GE3 Vishay/Siliconix, SQM100N04-3M5-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQM100N04-3M5-GE3
• Description: MOSFET 40V 100A 157W
• Manufacturer: Vishay/Siliconix

Specifications of SQM100N04-3M5-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 0.003 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-263
• Fall Time: 9 ns
• Forward Transconductance Gfs (max / Min): 201 S
• Gate Charge Qg: 95.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 157 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 48 ns

TYPICAL CHARACTERISTICS (T
S12-1849-Rev. B, 30-Jul-12
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0
0
0
0
0
0
C
T
C
rss
= - 55 °C
V
T
5
GS
C
C
= 25 °C
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= 10 V thru 5 V
3
V
V
10
DS
DS
Output Characteristics
C
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
iss
I
T
D
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
C
15
Capacitance
- Drain Current (A)
28
= 125 °C
6
20
42
9
25
V
30
A
GS
= 25 °C, unless otherwise noted)
12
56
= 4 V
35
15
70
40
3
0.005
0.004
0.003
0.002
0.001
120
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
I
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D
T
= 100 A
C
20
T
On-Resistance vs. Drain Current
= 125 °C
C
20
2
= 25 °C
V
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
40
I
D
Gate Charge
- Drain Current (A)
40
4
V
SQM100N04-3m5
GS
V
T
60
DS
C
= 10 V
= - 55 °C
= 20 V
60
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Vishay Siliconix
Document Number: 67005
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80
8
100
100
10
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