PSMN034-100BS,118 NXP Semiconductors, PSMN034-100BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN034-100BS,118
• Description: MOSFET N-CH 100 V 34.5 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN034-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.4 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 62 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN034-100BS
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V GS
(V)
12
10
8
6
4
2
0
charge; typical values
0
20 V
10
20
(A)
V
I S
DS
40
30
20
10
0
= 50 V
Q G (nC)
0
All information provided in this document is subject to legal disclaimers.
003aae113
30
0.25
Rev. 2 — 2 March 2012
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
T
j
= 175 ° C
0.5
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
0.75
4
3
2
10
as a function of drain-source voltage; typical
values
T
-1
003aae114
j
V SD (V)
= 25 ° C
1
PSMN034-100BS
1
10
© NXP B.V. 2012. All rights reserved.
V DS (V)
003aae112
C
C
C
10
oss
iss
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2
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