PSMN034-100BS,118 NXP Semiconductors, PSMN034-100BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN034-100BS,118
• Description: MOSFET N-CH 100 V 34.5 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN034-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.4 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 62 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN034-100BS
Product data sheet
Fig 7.
Fig 9.
(pF)
C
2000
1500
1000
(A)
500
I
D
40
30
20
10
0
0
gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse capacitances as a function of
Output characteristics: drain current as a
0
0
10.0
6.5
1
5.5
5.0
4
2
3
8
V
GS
V GS (V)
C
C
All information provided in this document is subject to legal disclaimers.
4
003aae109
003aae106
iss
rss
(V) =
V DS (V)
4.7
4.5
4
12
5
Rev. 2 — 2 March 2012
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
(mΩ)
R DSon
V
GS(th)
(V)
100
80
60
40
20
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
PSMN034-100BS
10
60
max
min
typ
120
15
© NXP B.V. 2012. All rights reserved.
V GS (V)
003aae111
003aad280
T
j
(°C)
180
20
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