PSMN034-100BS,118 NXP Semiconductors, PSMN034-100BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN034-100BS,118
• Description: MOSFET N-CH 100 V 34.5 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN034-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.4 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 62 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN034-100BS
Product data sheet
Table 6.
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g fs
50
40
30
20
10
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
…continued
20
30
Conditions
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
DS
DS
003aae110
G(ext)
I D (A)
= 15 A; V
= 5 A; dI
Figure 17
= 50 V; R
= 50 V
= 4.7 Ω; T
40
Rev. 2 — 2 March 2012
S
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
GS
/dt = 100 A/µs; V
L
= 0 V; T
= 3.3 Ω; V
j
= 25 °C
Fig 6.
j
= 25 °C;
GS
(A)
I
D
30
25
20
15
10
= 10 V;
GS
5
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
= 0 V;
1
PSMN034-100BS
2
T
j
= 175 ° C
Min
-
-
-
-
-
-
-
3
Typ
12
10
28
9
0.85
38
59
© NXP B.V. 2012. All rights reserved.
4
003aae107
T
V
j
GS (V)
= 25 ° C
Max
-
-
-
-
1.2
-
-
5
ns
ns
nC
Unit
ns
ns
V
ns
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