PSMN034-100BS,118 NXP Semiconductors, PSMN034-100BS,118 Datasheet

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PSMN034-100BS,118

Manufacturer Part Number
PSMN034-100BS,118
Description
MOSFET N-CH 100 V 34.5 MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN034-100BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
90 V
Gate-source Breakdown Voltage
4.4 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
62 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
86 W
Factory Pack Quantity
800
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
Rev. 2 — 2 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure 12
Figure 13
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; unclamped; R
14; see
j
D
D
D
≤ 175 °C
j(init)
GS
= 15 A; T
= 15 A; T
= 15 A; V
Figure 2
= 10 V; see
= 25 °C; I
Figure 15
j
j
DS
= 100 °C;
= 25 °C;
= 50 V;
D
GS
= 32 A;
Figure 1
= 50 Ω
Suitable for standard level gate drive
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
29.3
6.9
23.8
-
Max
100
32
86
175
62
34.5
-
-
42
°C
nC
Unit
V
A
W
mΩ
mΩ
nC
mJ

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PSMN034-100BS,118 Summary of contents

Page 1

... PSMN034-100BS N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... T pulsed ° ° j(init) ≤ 100 V; unclamped sup All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS Graphic symbol mbb076 Version SOT404 Min Max - 100 = 20 kΩ - 100 ...

Page 3

... N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. 003aae103 P 150 200 ° C) Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature t p =10 μ ...

Page 4

... Product data sheet N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS Min Typ Max - 0.9 1 003aae105 t p δ = ...

Page 5

... Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS Min Typ Max Unit 100 - - ...

Page 6

... (A) Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS Min Typ - 0. 003aae107 = 175 ° C ...

Page 7

... V GS(th) 4 (V) Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS 100 Drain-source on-state resistance as a function of gate-source voltage; typical values 5 (V) 4 max 3 typ ...

Page 8

... V (V) GS Fig 12. Normalized drain-source on-state resistance 003aae108 4.7 5.0 5.5 6.5 10 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS 3.2 a 2.4 1.6 0 factor as a function of junction temperature GS(pl) V GS(th ...

Page 9

... Q G (nC) Fig 16. Input, output and reverse transfer capacitances ( 175 ° 0.25 0.5 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS function of drain-source voltage; typical values 003aae114 = 25 ° 0.75 1 ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN034-100BS v.2 20120302 • Modifications: Status changed from objective to product. • Various changes to content. PSMN034-100BS v.1 20111027 PSMN034-100BS Product data sheet N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Data sheet status Change notice ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN034-100BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 March 2012 Document identifier: PSMN034-100BS ...

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