PSMN017-80BS,118 NXP Semiconductors, PSMN017-80BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN017-80BS,118
• Description: MOSFET N-CH 80 V 17 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 4.7 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 29 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN017-80BS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
R
(mΩ)
(V)
DSon
50
40
30
20
10
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
4
8
0
12
60
max
min
typ
16
120
V
All information provided in this document is subject to legal disclaimers.
003aad466
GS
003aad280
T
j
(°C)
(V)
20
180
Rev. 2 — 1 March 2012
N-channel 80 V 17 mΩ standard level MOSFET in D2PAK
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.8
1.2
0.6
−1
−2
−3
−4
−5
−6
3
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
2
PSMN017-80BS
min
60
typ
4
120
max
V
© NXP B.V. 2012. All rights reserved.
GS
003aae090
T
j
(V)
( ° C)
03aa35
180
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