PSMN017-80BS,118 NXP Semiconductors, PSMN017-80BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN017-80BS,118
• Description: MOSFET N-CH 80 V 17 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 4.7 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 29 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN017-80BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
2500
2000
1500
1000
(pF)
(A)
I
500
C
D
60
50
40
30
20
10
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
0.5
10
3
8
6.5
…continued
6
1
6
5.5
V
1.5
9
GS
C
C
All information provided in this document is subject to legal disclaimers.
(V) = 4.5
rss
iss
003aad458
V
003aad464
V
DS
GS
Conditions
I
see
I
V
(V)
(V)
S
S
GS
5
= 10 A; V
= 40 A; dI
12
2
Figure 17
= 0 V; V
Rev. 2 — 1 March 2012
N-channel 80 V 17 mΩ standard level MOSFET in D2PAK
GS
S
DS
/dt = 100 A/µs;
= 0 V; T
= 40 V
Fig 6.
Fig 8.
(S)
g
(A)
j
I
fs
D
= 25 °C;
50
40
30
20
10
70
60
50
40
30
20
10
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
10
2
PSMN017-80BS
20
T
j
= 175 °C
Min
-
-
-
30
4
Typ
0.79
41
55
© NXP B.V. 2012. All rights reserved.
V
40
T
GS
003aad465
003aad460
j
= 25 °C
I
(V)
D
-
Max
1.2
-
(A)
50
6
Unit
V
ns
nC
6 of 14