PSMN017-80BS NXP Semiconductors, PSMN017-80BS Datasheet
PSMN017-80BS
Related parts for PSMN017-80BS
PSMN017-80BS Summary of contents
Page 1
... PSMN017-80BS N-channel mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
Page 2
... T pulsed ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS Graphic symbol G mbb076 2 3 Min - = 20 kΩ -20 Figure 1 - Figure °C; ...
Page 3
... N-channel mΩ standard level MOSFET in D2PAK 003aad364 P (%) 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS 120 der 100 Normalized total power dissipation as a function of mounting base temperature 10 μs 100 μ 100 ms ...
Page 4
... N-channel mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS Min Typ Max - 1 1 003aad234 t p δ = ...
Page 5
... MHz °C; see Figure 1.6 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS Min Typ Max Unit 4 ...
Page 6
... DS 003aad458 5 (V) = 4 (V) DS Fig 6. 003aad464 C iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS Min Typ = 25 ° 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
Page 7
... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS 03aa35 min typ max (V) GS 003aae090 0 60 120 180 ( ° © ...
Page 8
... I (A) D Fig 14. Gate charge waveform definitions 003aad462 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS GS(pl) V GS(th GS1 GS2 ...
Page 9
... Product data sheet N-channel mΩ standard level MOSFET in D2PAK ( 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS 003aad461 = 25 °C j 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...
Page 10
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN017-80BS v.2 20120301 • Modifications: Status changed from objective to product. • Various changes to content. PSMN017-80BS v.1 20111024 PSMN017-80BS Product data sheet N-channel mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...
Page 12
... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS © NXP B.V. 2012. All rights reserved ...
Page 13
... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 PSMN017-80BS © NXP B.V. 2012. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 March 2012 Document identifier: PSMN017-80BS ...