PSMN017-80BS,118 NXP Semiconductors, PSMN017-80BS,118 Datasheet - Page 11

• Manufacturer Part Number: PSMN017-80BS,118
• Description: MOSFET N-CH 80 V 17 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 4.7 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 29 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
8. Revision history
Table 7.
PSMN017-80BS
Product data sheet
Document ID
PSMN017-80BS v.2
Modifications:
PSMN017-80BS v.1
Revision history
20111024
Release date
20120301
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•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 1 March 2012
N-channel 80 V 17 mΩ standard level MOSFET in D2PAK
Change notice
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PSMN017-80BS
Supersedes
PSMN017-80BS v.1
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© NXP B.V. 2012. All rights reserved.
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