PSMN017-80BS,118 NXP Semiconductors, PSMN017-80BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN017-80BS,118
• Description: MOSFET N-CH 80 V 17 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 4.7 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 29 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN017-80BS
Product data sheet
Fig 1.
Fig 3.
10
10
10
(A)
(A)
I
I
10
50
D
40
30
20
10
-1
D
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
50
Limit R
DSon
100
= V
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
003aad364
mb
10
DC
(°C)
200
Rev. 2 — 1 March 2012
N-channel 80 V 17 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
2
100 μs
1 ms
10 ms
100 ms
50
10 μs
PSMN017-80BS
100
V
DS
(V)
150
© NXP B.V. 2012. All rights reserved.
T
003aad388
mb
03aa16
(°C)
10
200
3
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