NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 2

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
NX3008NBKW
Product data sheet
Pin
1
2
3
Type number
NX3008NBKW
Type number
NX3008NBKW
% = placeholder for manufacturing site code
Symbol Description
G
S
D
Pinning information
Ordering information
Marking codes
gate
source
drain
Package
Name
SC-70
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 August 2011
Simplified outline
SOT323 (SC-70)
1
Marking code
AA%
3
2
30 V, 350 mA N-channel Trench MOSFET
[1]
Graphic symbol
NX3008NBKW
G
© NXP B.V. 2011. All rights reserved.
D
S
017aaa255
SOT323
Version
2 of 16