NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 15

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

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NX3008NBKW
Product data sheet
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All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 August 2011
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12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
30 V, 350 mA N-channel Trench MOSFET
NX3008NBKW
© NXP B.V. 2011. All rights reserved.
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