NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 13

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

NXP Semiconductors
11. Revision history
Table 8.
NX3008NBKW
Product data sheet
Document ID
NX3008NBKW v.1
Revision history
Release date
20110802
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 2 August 2011
Change notice
-
30 V, 350 mA N-channel Trench MOSFET
NX3008NBKW
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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