NX3008NBKW,115 NXP Semiconductors, NX3008NBKW,115 Datasheet - Page 11

• Manufacturer Part Number: NX3008NBKW,115
• Description: MOSFET 30V 350 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKW,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323-3
• Fall Time: 19 ns
• Forward Transconductance Gfs (max / Min): 310 mS
• Gate Charge Qg: 0.52 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 11 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 69 ns

NXP Semiconductors
9. Package outline
Fig 18. Package outline SOT323 (SC-70)
NX3008NBKW
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
All information provided in this document is subject to legal disclaimers.
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 1 — 2 August 2011
1.3
e
w
B
M
0.65
B
e 1
JEITA
SC-70
scale
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
30 V, 350 mA N-channel Trench MOSFET
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
NX3008NBKW
A
Q
c
© NXP B.V. 2011. All rights reserved.
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT323
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