PSMN6R5-80BS,118 NXP Semiconductors, PSMN6R5-80BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN6R5-80BS,118
• Description: MOSFET N-CH 80 V 46 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R5-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 4.3 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 6.9 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 210 W
• Factory Pack Quantity: 800

NXP Semiconductors
Tested to JEDEC standards where applicable.
PSMN6R5-80BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
(A)
7000
6000
5000
4000
3000
2000
C
I
100
D
80
60
40
20
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
Characteristics
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
5
0.5
8
10
5.5
6
…continued
1
15
V
C
C
1.5
GS
rss
iss
Conditions
I
see
I
V
20
All information provided in this document is subject to legal disclaimers.
S
S
(V) = 4.5
V
DS
003aad446
003aad440
V
= 15 A; V
= 25 A; dI
DS
GS
Figure 17
= 40 V
(V)
(V)
5
25
2
Rev. 2 — 2 March 2012
GS
S
/dt = 100 A/µs; V
= 0 V; T
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
Fig 6.
Fig 8.
j
= 25 °C;
(A)
(S)
g
I
100
150
120
D
fs
80
60
40
20
90
60
30
0
0
GS
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
= 0 V;
20
PSMN6R5-80BS
2
40
T
j
= 175 °C
Min
-
-
-
60
4
Typ
0.79
48
82
T
© NXP B.V. 2012. All rights reserved.
80
V
j
= 25 °C
003aad447
003aad442
GS
I
D
(V)
Max
1.2
-
-
(A)
100
6
nC
Unit
V
ns
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