PSMN6R5-80PS NXP Semiconductors, PSMN6R5-80PS Datasheet

MOSFET,N CH,80V,100A,TO-220AB

PSMN6R5-80PS

Manufacturer Part Number
PSMN6R5-80PS
Description
MOSFET,N CH,80V,100A,TO-220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN6R5-80PS

Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
5.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
[1]
[2]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
Rev. 02 — 1 November 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Continuous current rating is limited by package.
Measured 3 mm from package.
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
Quick reference data
Conditions
T
T
see
T
V
T
V
V
see
V
I
R
D
j
mb
mb
j
GS
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 49 A; V
= 25 °C; V
Figure 1
= 25 °C; see
Figure 15
= 40 V; see
= 10 V; I
= 10 V; I
= 10 V; T
= 50 Ω; unclamped
sup
j
D
D
≤ 175 °C
j(init)
Suitable for standard level gate drive
sources
Motor control
Server power supplies
GS
= 15 A;
= 25 A;
≤ 80 V;
Figure 13
Figure
Figure 2
= 10 V;
= 25 °C;
14;
[1]
[2]
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
5.9
16
71
-
Max Unit
80
100
210
175
6.9
-
-
700
V
A
W
°C
mΩ
nC
nC
mJ

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PSMN6R5-80PS Summary of contents

Page 1

... PSMN6R5-80PS N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... V sup GS 003aad362 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min - = 20 kΩ -20 Figure 1 - [1] Figure °C; see Figure -55 - ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN6R5-80PS Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS 003aad386 10 μs 100 μ 100 ms 2 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN6R5-80PS Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min Typ Max - 0.4 0.7 003aad247 t p δ ...

Page 6

... Figure 14; see Figure see MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext ° see Figure 17 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min Typ Max = -55 ° ° 4 150 = 25 ° 100 - 10 100 - - 11.5 ...

Page 7

... V (V) = 4 (V) DS Fig 6. 003aad446 C iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Min Typ - 100 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 150 ...

Page 8

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS 03aa35 min typ max (V) GS 003aad045 - 120 150 ...

Page 9

... N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 003aad441 ( 5 100 I (A) D Fig 14. Gate charge waveform definitions 003aad444 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS GS(pl) V GS(th GS1 GS2 G(tot (pF ...

Page 10

... Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 100 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS 003aad443 = 25 °C j 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN6R5-80PS v.2 20101101 • Modifications: Status changed from objective to product. • Various changes to content. PSMN6R5-80PS v.1 20100309 PSMN6R5-80PS Product data sheet N-channel 80 V 6.9 mΩ standard level MOSFET in TO220 Data sheet status ...

Page 13

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 November 2010 PSMN6R5-80PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 November 2010 Document identifier: PSMN6R5-80PS ...

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