PSMN6R5-80BS,118 NXP Semiconductors, PSMN6R5-80BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN6R5-80BS,118
• Description: MOSFET N-CH 80 V 46 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R5-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 4.3 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 6.9 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 210 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN6R5-80BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
10
-4
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
10
Conditions
see
Minimum footprint; mounted on a
printed circuit board
-3
Figure 4
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
10
-2
10
-1
PSMN6R5-80BS
Min
-
-
P
1
Typ
0.4
50
t
p
T
© NXP B.V. 2012. All rights reserved.
t
p
(s)
003aad247
δ =
Max
0.7
-
T
t
p
t
10
Unit
K/W
K/W
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