PSMN6R5-80BS,118 NXP Semiconductors, PSMN6R5-80BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN6R5-80BS,118
• Description: MOSFET N-CH 80 V 46 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R5-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 4.3 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 6.9 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 210 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN6R5-80BS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
80
60
40
20
S
0
0
All information provided in this document is subject to legal disclaimers.
0.3
Rev. 2 — 2 March 2012
T
j
= 175 °C
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
0.6
T
0.9
j
= 25 °C
003aad443
V
SD
(V)
1.2
PSMN6R5-80BS
© NXP B.V. 2012. All rights reserved.
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