PSMN011-30YLC,115 NXP Semiconductors, PSMN011-30YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN011-30YLC,115
• Description: MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Resistance Drain-source Rds (on): 11.6 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Gate Charge Qg: 4.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 29 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN011-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
50
40
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
V
GS
(V) = 2.8
10
Q
GS1
I
Q
D
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
GS
20
Q
GS2
Q
3.0
G(tot)
30
Q
GD
40
All information provided in this document is subject to legal disclaimers.
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003aaa508
I
D
3.5
4.5
10
(A)
50
Rev. 3 — 24 October 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN011-30YLC
6V
4
24V
60
4.5V
V
8
DS
120
= 15V
© NXP B.V. 2011. All rights reserved.
Q
V
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GS
G
T
(nC)
j
=10V
( ° C)
180
12
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