PSMN011-30YLC,115 NXP Semiconductors, PSMN011-30YLC,115 Datasheet - Page 12

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PSMN011-30YLC,115

Manufacturer Part Number
PSMN011-30YLC,115
Description
MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN011-30YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Resistance Drain-source Rds (on)
11.6 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Gate Charge Qg
4.9 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
29 W
Factory Pack Quantity
1500
NXP Semiconductors
8. Revision history
Table 7.
PSMN011-30YLC
Product data sheet
Document ID
PSMN011-30YLC v.3
Modifications:
PSMN011-30YLC v.2
Revision history
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
20111024
20110930
Release date
Data sheet status changed from preliminary to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 October 2011
Data sheet status
Product data sheet
Preliminary data sheet
Change notice
-
-
PSMN011-30YLC
Supersedes
PSMN011-30YLC v.2
PSMN011-30YLC v.1
© NXP B.V. 2011. All rights reserved.
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