PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet
PSMN011-30YL,115
Manufacturer Part Number
PSMN011-30YL,115
Description
MOSFET Power N-Ch 30V Trench MOS logic level FET
Manufacturer
NXP Semiconductors
Specifications of PSMN011-30YL,115
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.7 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
36 A
Power Dissipation
49 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
5 ns
Gate Charge Qg
7.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
8 ns
Lead Free Status / Rohs Status
Details
Other names
934064949115
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
G(tot)
PSMN011-30YL
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev. 2 — 17 May 2011
High efficiency due to low switching
and conduction losses
Class-D amplifiers
DC-to-DC converters
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
Conditions
T
T
see
T
V
T
V
V
see
V
V
see
V
I
R
D
j
mb
mb
j
GS
GS
DS
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C
= 51 A; V
= 25 °C; V
Figure 1
= 25 °C; see
Figure 15
Figure 15
= 15 V; see
= 15 V; see
= 10 V; I
= 10 V; I
= 4.5 V; I
= 10 V; T
= 50 Ω; unclamped
sup
j
D
D
≤ 175 °C
D
j(init)
GS
= 15 A;
= 45 A;
≤ 30 V;
Suitable for logic level gate drive
sources
Motor control
Server power supplies
= 45 A;
Figure
Figure
Figure 2
= 10 V;
= 25 °C;
14;
14;
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
9
3.5
7.3
-
Max Unit
30
51
49
10.7 mΩ
-
-
14
V
A
W
nC
nC
mJ
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