PSMN011-30YLC,115 NXP Semiconductors, PSMN011-30YLC,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN011-30YLC,115
• Description: MOSFET N-CH 30 V 11.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Resistance Drain-source Rds (on): 11.6 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Gate Charge Qg: 4.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 29 W
• Factory Pack Quantity: 1500

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN011-30YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.05
0.02
δ = 0.5
0.1
Thermal characteristics
0.2
Parameter
thermal resistance from junction to mounting base
single shot
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 3 — 24 October 2011
10
-3
Conditions
see
Figure 5
10
-2
PSMN011-30YLC
Min
-
10
P
-1
tp
Typ
4.87
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aag218
δ =
Max
5.06
T
tp
t
1
Unit
K/W
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