PSMN3R3-80BS,118 NXP Semiconductors, PSMN3R3-80BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN3R3-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN3R3-80BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
(A)
D
I
10
10
10
10
10
10
D
100
−1
−2
−3
−4
−5
−6
80
60
40
20
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
10.0
8.0
5.5
6.0
0.5
2
min
typ
1
4
V
GS
max
V
V
DS
All information provided in this document is subject to legal disclaimers.
(V) = 4.5
GS
003aaf622
(V)
(V)
03aa35
4.4
4.2
4.0
Rev. 2 — 29 February 2012
1.5
6
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN3R3-80BS
60
60
max
min
typ
120
120
© NXP B.V. 2012. All rights reserved.
003aad280
T
T
003aaf608
j
j
( ° C)
(°C)
180
180
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