PSMN3R3-80BS,118 NXP Semiconductors, PSMN3R3-80BS,118 Datasheet - Page 11

• Manufacturer Part Number: PSMN3R3-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
8. Revision history
Table 7.
PSMN3R3-80BS
Product data sheet
Document ID
PSMN3R3-80BS v.2
Modifications:
PSMN3R3-80BS v.1
Revision history
20120229
20110928
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
Data sheet status
Product data sheet
Objective data sheet
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
Change notice
-
-
PSMN3R3-80BS
Supersedes
PSMN3R3-80BS v.1
-
© NXP B.V. 2012. All rights reserved.
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