PSMN3R3-80BS,118 NXP Semiconductors, PSMN3R3-80BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN3R3-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN3R3-80BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(pF)
250
200
150
100
fs
10
C
10
10
10
50
0
5
4
3
2
10
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
-1
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
1
30
…continued
45
10
V
Conditions
I
see
I
V
60
All information provided in this document is subject to legal disclaimers.
GS
S
S
003aaf623
003aaf619
DS
C
C
= 25 A; V
= 25 A; dI
(V)
I
iss
rss
D
Figure 17
= 20 V
(A)
10
Rev. 2 — 29 February 2012
75
2
GS
S
/dt = 100 A/µs; V
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(m Ω )
(A)
DSon
I
D
80
60
40
20
25
20
15
10
0
5
0
GS
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
= 0 V;
5
2
PSMN3R3-80BS
T
j
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
59
109
T
15
j
= 25 ° C
V
© NXP B.V. 2012. All rights reserved.
GS
003aaf620
003aag697
V
GS
(V)
Max
1.2
-
-
(V)
20
6
V
Unit
ns
nC
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