PSMN3R3-80ES NXP Semiconductors, PSMN3R3-80ES Datasheet
PSMN3R3-80ES
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PSMN3R3-80ES Summary of contents
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... PSMN3R3-80ES N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... T pulsed ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES Graphic symbol mbb076 Version SOT226 Min Max - kΩ -20 20 ...
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... Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN3R3-80ES Product data sheet N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES Min Typ Max - 0.22 0. 003aaf613 tp P δ = ...
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... Figure MHz °C; see Figure 0.53 Ω Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES Min Typ Max 4 0. ...
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... 003aaf602 (A) D Fig 6. 003aag797 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES Min Typ = 25 ° 121 ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... GS V 4.5 0.6 0 (V) DS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normailzed drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 a 2.4 1.8 1.2 ...
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... Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK ( 175 ° 0.25 0.5 0.75 All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES 003aaf611 = 25 ° (V) SD © NXP B.V. 2011. All rights reserved ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN3R3-80ES v.1 20111031 PSMN3R3-80ES Product data sheet N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 PSMN3R3-80ES Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 October 2011 Document identifier: PSMN3R3-80ES ...