SiHG25N40D-GE3 Vishay/Siliconix, SiHG25N40D-GE3 Datasheet - Page 7

• Manufacturer Part Number: SiHG25N40D-GE3
• Description: MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHG25N40D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 25 A
• Resistance Drain-source Rds (on): 170 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247 AC
• Fall Time: 37 ns
• Forward Transconductance Gfs (max / Min): 7.4 S
• Gate Charge Qg: 44 nC
• Power Dissipation: 278 W
• Rise Time: 57 ns

Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 18-Mar-13
ECN: X13-0045-Rev. C, 18-Mar-13
DWG: 5971
the outermost extremes of the plastic body.
DIM.
A1
A2
D1
b1
b2
b3
b4
b5
c1
D
A
b
c
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.10
3
2 x R
5
(2)
19.71
13.08
MIN.
4.58
2.21
1.17
0.99
0.99
1.53
1.65
2.42
2.59
0.38
0.38
2 x b2
R/2
Q
MILLIMETERS
3 x b
M
www.vishay.com
L1
B
C
C
A
M
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1
MAX.
20.82
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
2
b4
E
-
4
E/2
3
2 x e
S
0.180
0.087
0.046
0.039
0.039
0.060
0.065
0.095
0.102
0.015
0.015
0.776
0.515
MIN.
TO-247AC (High Voltage)
D
L
For technical questions, contact:
INCHES
See view B
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.820
-
D D E
A
A1
C
View B
1
A2
D
A
A
E
C
C
[e-mail]
DIM.
Ø P1
Ø P
Ø k
D2
E1
L1
N
Q
E
e
L
R
S
Thermal pad
www.vishay.com/doc?91000
Ø k
Planting
D2
M
7
15.29
13.72
14.20
MIN.
0.51
3.71
3.51
5.31
4.52
D
MILLIMETERS
ØP
-
(c)
B
Package Information
5.46 BSC
7.62 BSC
5.51 BSC
M
Section C - C, D - D, E - E
A
0.254
View A - A
0.01
(b1, b3, b5)
(b, b2, b4)
E1
MAX.
15.87
16.25
4
5
M
1.30
4.29
3.66
7.39
5.69
5.49
-
D
(Datum B)
B
M
(4)
Vishay Siliconix
ØP1
Document Number: 91360
D1
0.020
0.602
0.540
0.559
0.146
0.138
0.209
0.178
MIN.
c1
Base metal
-
5
0.215 BSC
0.300 BSC
0.217 BSC
INCHES
0.010
MAX.
0.051
0.625
0.640
0.169
0.144
0.291
0.224
0.216
-