SiHG25N40D-GE3 Vishay/Siliconix, SiHG25N40D-GE3 Datasheet

SiHG25N40D-GE3

Manufacturer Part Number

SiHG25N40D-GE3

Description

MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHG25N40D-GE3.pdf (8 pages)

Specifications of SiHG25N40D-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

25 A

Resistance Drain-source Rds (on)

170 mOhms at 10 V

Configuration

Single

Mounting Style

Through Hole

Package / Case

TO-247 AC

Fall Time

37 ns

Forward Transconductance Gfs (max / Min)

7.4 S

Gate Charge Qg

44 nC

Power Dissipation

278 W

Rise Time

57 ns

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

S12-0625-Rev. B, 26-Mar-12

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energyb

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dtd

Soldering Recommendations (Peak Temperature)

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

 I

= 50 V, starting T

max. at 25 °C ()

, starting T

TO-247AC

max.

www.vishay.com

= 25 °C.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 2.3 mH, R

= 150 °C)

= 10 V

N-Channel MOSFET

D Series Power MOSFET

Single

For technical questions, contact:

450

= 25 , I

= 25 °C, unless otherwise noted)

0.17

at 10 V

= 17 A.

for 10 s

= 125 °C

TO-247AC

SiHG25N40D-E3

SiHG25N40D-GE3

= 100 °C

= 25 °C

FEATURES

• Halogen-free According to IEC 61249-2-21

• Optimal Design

• Optimal Efficiency and Operation

• Compliant to RoHS Directive 2011/65/EU

APPLICATIONS

• Consumer Electronics

• Lighting

• Industrial

• SMPS

Definition

- Low Area Specific On-Resistance

- Low Input Capacitance (C

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R

- Fast Switching

- Displays (LCD or Plasma TV)

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

- 55 to + 150

iss

LIMIT

300

± 30

400

556

278

2.2

0.6

)

SiHG25N40D

Vishay Siliconix

Document Number: 91484

x Q

UNIT

W/°C

V/ns

°C

Related parts for SiHG25N40D-GE3

SiHG25N40D-GE3 Summary of contents

Page 1

... Compliant to RoHS Directive 2011/65/EU APPLICATIONS S • Consumer Electronics - Displays (LCD or Plasma TV) • Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers • SMPS TO-247AC SiHG25N40D-E3 SiHG25N40D-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° 125 ° ...

Page 2

... ° ° dI/dt = 100 A/μ RRM 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG25N40D Vishay Siliconix MAX. UNIT 40 °C/W 0.45 MIN. TYP. MAX. 400 - - = 250 μ ± 100 = 125 ° ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG25N40D Vishay Siliconix 100 120 140 160 T , Junction Temperature (° iss MHz ...

Page 4

... Fig Temperature vs. Drain-to-Source Voltage 0.001 0.01 Pulse Time (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG25N40D Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (° ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG25N40D Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG25N40D Vishay Siliconix + + Document Number: 91484 ...

Page 7

TO-247AC (High Voltage E MILLIMETERS DIM. MIN. ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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