SiHG25N40D-GE3 Vishay/Siliconix, SiHG25N40D-GE3 Datasheet - Page 4

• Manufacturer Part Number: SiHG25N40D-GE3
• Description: MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHG25N40D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 25 A
• Resistance Drain-source Rds (on): 170 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247 AC
• Fall Time: 37 ns
• Forward Transconductance Gfs (max / Min): 7.4 S
• Gate Charge Qg: 44 nC
• Power Dissipation: 278 W
• Rise Time: 57 ns

S12-0625-Rev. B, 26-Mar-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.2
1
* V
Fig. 8 - Maximum Safe Operating Area
Operation in this Area
Limited by R
T
T
Single Pulse
GS
C
J
0.01
= 150 °C
0.1
= 25 °C
0.4
> minimum V
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Limited by R
1
0.0001
V
V
SD
T
DS
J
0.05
0.1
Duty Cycle = 0.5
0.2
Single Pulse
, Source-Drain Voltage (V)
, Drain-to-Source Voltage (V)
= 150 °C
0.6
DS(on)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
GS
DS(on)
0.8
at which R
*
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
BVDSS Limited
0.02
T
1
J
I
DM
= 25 °C
100
V
= Limited
DS(on)
GS
1.2
= 0 V
0.001
For technical questions, contact:
is specified
1.4
100 μs
1 ms
10 ms
1000
1.6
Pulse Time (s)
4
0.01
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
500
475
450
425
400
375
350
30
24
18
12
6
0
- 60
25
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- 40 - 20
T
50
J
0.1
T
, Junction Temperature (°C)
J
, Case Temperature (°C)
0
20 40 60 80 100 120 140
75
100
SiHG25N40D
Vishay Siliconix
Document Number: 91484
125
1
150
160