SiHG25N40D-GE3 Vishay/Siliconix, SiHG25N40D-GE3 Datasheet - Page 6

• Manufacturer Part Number: SiHG25N40D-GE3
• Description: MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SiHG25N40D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 25 A
• Resistance Drain-source Rds (on): 170 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247 AC
• Fall Time: 37 ns
• Forward Transconductance Gfs (max / Min): 7.4 S
• Gate Charge Qg: 44 nC
• Power Dissipation: 278 W
• Rise Time: 57 ns

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91484.
S12-0625-Rev. B, 26-Mar-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
For technical questions, contact:
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 18 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
-
+
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
6
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
[e-mail]
D =
-
g
www.vishay.com/doc?91000
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
SiHG25N40D
Vishay Siliconix
Document Number: 91484