IHW40N135R3FKSA1 Infineon Technologies, IHW40N135R3FKSA1 Datasheet - Page 8

• Manufacturer Part Number: IHW40N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW40N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 215 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 80 A
• Mounting Style: Through Hole
• Part # Aliases: IHW40N135R3 IHW40N135R3XK

Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
120
110
100
3.5
3.0
2.5
2.0
1.5
1.0
90
80
70
60
50
40
30
20
10
0
0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
vj
17V
15V
13V
11V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
9V
7V
5V
=175°C)
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=20A
=40A
=80A
1
50
2
75
100
3
125
InductionHeatingSeries
4
150
175
5
8
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
1000
120
110
100
100
90
80
70
60
50
40
30
20
10
10
0
4
0
(V
collectorcurrent
(inductiveload,T
V
Figure E)
GE
10
CE
5
V
T
T
t
t
=15/0V,r
d(off)
f
GE
=20V)
j
j
=25°C
=175°C
I
C
,GATE-EMITTERVOLTAGE[V]
,COLLECTORCURRENT[A]
20
6
G
30
=7,5 ,Dynamictestcircuitin
7
vj
=175°C,V
40
8
IHW40N135R3
50
9
Rev.2.1,2012-10-12
CE
=600V,
10
60
11
70
12
80