IHW40N135R3FKSA1 Infineon Technologies, IHW40N135R3FKSA1 Datasheet - Page 11

• Manufacturer Part Number: IHW40N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW40N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 215 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 80 A
• Mounting Style: Through Hole
• Part # Aliases: IHW40N135R3 IHW40N135R3XK

Figure 17. Typicalgatecharge
0.001
Figure 19. IGBTtransientthermalresistance
0.01
0.1
16
14
12
10
8
6
4
2
0
1
1E-6
0
(I
(D=t
50
C
1E-5
270V
1080V
=40A)
i:
r
p
i
i
[K/W]:
[s]:
/T)
100
Q
GE
t
1
0.060632
2.9E-4
1E-4
p
,GATECHARGE[nC]
,PULSEWIDTH[s]
150
2
0.080405
2.2E-3
0.001
200
3
0.18889
0.01389068
250
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
4
0.015093
0.1188353
300
InductionHeatingSeries
0.1
350
5
2.0E-3
1.860864
400
1
11
Figure 18. Typicalcapacitanceasafunctionof
Figure 20. Diodetransientthermalimpedanceasa
0.001
1E+4
1000
0.01
100
0.1
10
1
1E-6
0
V
CE
3
collector-emittervoltage
(V
functionofpulsewidth
(D=t
,COLLECTOR-EMITTERVOLTAGE[V]
1E-5
GE
=0V,f=1MHz)
i:
r
p
6
i
i
[K/W]:
[s]:
/T)
t
1
0.060632
2.9E-4
9
1E-4
p
,PULSEWIDTH[s]
12
2
0.080405
2.2E-3
0.001
15
IHW40N135R3
3
0.18889
0.01389068
18
0.01
Rev.2.1,2012-10-12
21
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
4
0.015093
0.1188353
24
0.1
C
C
C
iss
oss
rss
5
2.0E-3
1.860864
27
30
1