IHW40N135R3FKSA1 Infineon Technologies, IHW40N135R3FKSA1 Datasheet - Page 7
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IHW40N135R3FKSA1
Manufacturer Part Number
IHW40N135R3FKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IHW40N135R3FKSA1.pdf
(15 pages)
Specifications of IHW40N135R3FKSA1
Rohs
yes
Collector- Emitter Voltage Vceo Max
1.35 kV
Collector-emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
215 W
Package / Case
TO-247-3
Continuous Collector Current Ic Max
80 A
Mounting Style
Through Hole
Part # Aliases
IHW40N135R3 IHW40N135R3XK
Figure 1. Forwardbiassafeoperatingarea
Figure 3. Collectorcurrentasafunctionofcase
100
0.1
10
80
70
60
50
40
30
20
10
1
0
25
1
t
p
10ms
V
=1µs
10µs
50µs
1ms
(D=0,T
temperature
(V
5µs
CE
DC
,COLLECTOR-EMITTERVOLTAGE[V]
GE
50
T
15V,T
C
,CASETEMPERATURE[°C]
C
=25°C,T
10
75
vj
175°C)
vj
100
175°C;V
100
125
GE
=15V)
InductionHeatingSeries
150
1000
175
7
Figure 2. Powerdissipationasafunctionofcase
Figure 4. Typicaloutputcharacteristic
450
400
350
300
250
200
150
100
120
110
100
50
90
80
70
60
50
40
30
20
10
0
0
0.0
25
V
V
GE
temperature
(T
(T
CE
=20V
0.5
vj
vj
17V
15V
13V
11V
,COLLECTOR-EMITTERVOLTAGE[V]
=25°C)
9V
7V
5V
50
175°C)
T
C
,CASETEMPERATURE[°C]
1.0
75
1.5
100
2.0
IHW40N135R3
2.5
125
Rev.2.1,2012-10-12
3.0
150
3.5
175
4.0