IHW40N135R3FKSA1 Infineon Technologies, IHW40N135R3FKSA1 Datasheet - Page 6
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IHW40N135R3FKSA1
Manufacturer Part Number
IHW40N135R3FKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IHW40N135R3FKSA1.pdf
(15 pages)
Specifications of IHW40N135R3FKSA1
Rohs
yes
Collector- Emitter Voltage Vceo Max
1.35 kV
Collector-emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
215 W
Package / Case
TO-247-3
Continuous Collector Current Ic Max
80 A
Mounting Style
Through Hole
Part # Aliases
IHW40N135R3 IHW40N135R3XK
SwitchingCharacteristic,InductiveLoad,atT
IGBTCharacteristic
Parameter
Turn-off delay time
Fall time
Turn-off energy
Turn-off energy, soft switching
Symbol Conditions
t
t
E
E
d(off)
f
off
off
InductionHeatingSeries
T
V
V
r
C =40pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
dv/dt=150.0V/µs
G
vj
CC
GE
vj
=7.5 ,L =220nH,
=175°C,
=175°C
=600V,I
=0.0/15.0V,
6
C
=40.0A,
min.
-
-
-
-
IHW40N135R3
Value
4.51
1.24
typ.
415
Rev.2.1,2012-10-12
98
max.
-
-
-
-
Unit
mJ
mJ
ns
ns