FDB3632_F085 Fairchild Semiconductor, FDB3632_F085 Datasheet - Page 3

• Manufacturer Part Number: FDB3632_F085
• Description: MOSFET 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDB3632_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB-3
• Fall Time: 46 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 W
• Rise Time: 39 ns
• Typical Turn-off Delay Time: 96 ns

©2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
0
2000
1000
100
50
0
0.01
0.1
10
2
1
-5
10
V
GS
25
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
= 10V
Ambient Temperature
T
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
SINGLE PULSE
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
75
10
-4
-4
100
T
A
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
t, PULSE WIDTH (s)
175
3
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
125
100
75
50
25
0
25
V
GS
= 10V
50
10
10
Case Temperature
-1
-1
T
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
100
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
CURRENT LIMITED
BY PACKAGE
DM
I = I
= 25
x Z
P
25
10
10
DM
o
θJC
0
0
C
1
125
o
/t
x R
C DERATE PEAK
2
175 - T
www.fairchildsemi.com
t
150
1
θJC
o
C)
t
2
+ T
C
150
C
10
10
1
1
175