STD3N40K3 STMicroelectronics, STD3N40K3 Datasheet - Page 8

• Manufacturer Part Number: STD3N40K3
• Description: MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3
• Manufacturer: STMicroelectronics

Specifications of STD3N40K3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 3.4 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 14 ns
• Gate Charge Qg: 11 nC
• Power Dissipation: 30 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 18 ns

Electrical characteristics
8/16
Figure 14. Maximum avalanche energy vs.
E
AS
(mJ)
30
50
45
40
35
25
20
15
10
0
5
0
starting Tj
20
40
60
V
I
D
DD
80
= 1 A
= 50 V
100
120 140
Doc ID 023398 Rev 1
AM12482v1
T
J
(°C)
STD3N40K3