STD3N40K3 STMicroelectronics, STD3N40K3 Datasheet - Page 10

• Manufacturer Part Number: STD3N40K3
• Description: MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3
• Manufacturer: STMicroelectronics

Specifications of STD3N40K3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 3.4 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 14 ns
• Gate Charge Qg: 11 nC
• Power Dissipation: 30 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 18 ns

Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
®
packages, depending on their level of environmental compliance. ECOPACK
is an ST trademark.
Doc ID 023398 Rev 1
STD3N40K3
®