STD3N40K3 STMicroelectronics, STD3N40K3 Datasheet - Page 7

• Manufacturer Part Number: STD3N40K3
• Description: MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3
• Manufacturer: STMicroelectronics

Specifications of STD3N40K3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 3.4 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 14 ns
• Gate Charge Qg: 11 nC
• Power Dissipation: 30 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 18 ns

STD3N40K3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
1.00
0.90
0.80
0.70
(norm)
1.10
100
(pF)
(V)
V
0.7
0.6
10
0.5
0.8
0.4
1.0
0.9
C
SD
-75
1
0.1
0
Capacitance variations
vs. temperature
characteristics
T
J
=25°C
-25
0.4
1
25
0.8
T
J
=150°C
10
I
D
75
1.2
=50µA
T
J
100
=-50°C
125
1.6
V
Doc ID 023398 Rev 1
DS
I
AM08998v1
AM12478v1
AM12480v1
T
SD
(V)
Coss
J
Ciss
Crss
(°C)
(A)
Figure 9.
Figure 11. Normalized on-resistance vs.
Figure 13. Normalized BV
R
BV
DS(on)
E
(norm)
(norm)
1.00
0.90
0.95
(µJ)
1.05
1.10
DSS
0.3
0.1
1.5
oss
0.8
0.6
0.5
0.4
0.2
0.5
0.7
2.5
2.0
1.0
0
0
-75
-75
0
temperature
Output capacitance stored energy
100
-25
-25
V
200
I
I
25
GS
D
D
25
=1mA
Electrical characteristics
=0.9A
=10V
DSS
300
75
75
vs. temperature
125
400
125
T
AM12477v1
AM12479v1
AM12481v1
V
T
J
(°C)
J
DS
(°C)
(V)
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