STD3N40K3 STMicroelectronics, STD3N40K3 Datasheet - Page 5

no-image

STD3N40K3

Manufacturer Part Number
STD3N40K3
Description
MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3
Manufacturer
STMicroelectronics
Datasheet

Specifications of STD3N40K3

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.8 A
Resistance Drain-source Rds (on)
3.4 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
DPAK
Fall Time
14 ns
Gate Charge Qg
11 nC
Power Dissipation
30 W
Rise Time
8 ns
Typical Turn-off Delay Time
18 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD3N40K3
Manufacturer:
ST
0
Company:
Part Number:
STD3N40K3
Quantity:
35 000
STD3N40K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
I
BV
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
GSO
rr
rr
r
f
rr
rr
(2)
(1)
Turn on delay time
Rise time
Turn off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 023398 Rev 1
I
I
V
(see
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 1.8 A, V
= 1.8 A, di/dt = 100 A/µs
= 1.8 A, di/dt = 100 A/µs
Igs=± 1 mA (open drain)
= 200 V, I
= 60 V
= 60 V, T
Figure
Figure
Figure
Test conditions
Test conditions
Test conditions
17)
17)
15)
GS
j
D
GS
= 150 °C
= 0.6,
= 0
= 10 V
Min.
Min.
Electrical characteristics
-
-
-
-
-
Min.
30
Typ.
Typ.
145
490
166
580
18
14
7
7
7
8
Typ.
Max.
Max.
-
1.8
7.2
1.5
Max. Unit
-
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/16
V

Related parts for STD3N40K3