MC68HC908GR8CD Freescale Semiconductor, MC68HC908GR8CD Datasheet - Page 112

• Manufacturer Part Number: MC68HC908GR8CD
• Description: 8-bit Microcontrollers - MCU 8 Bit 8MHz
• Manufacturer: Freescale Semiconductor

Specifications of MC68HC908GR8CD

• Product Category: 8-bit Microcontrollers - MCU
• Rohs: yes
• Core: HC08
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 8 MHz
• Program Memory Size: 64 KB
• Data Ram Size: 384 B
• Operating Supply Voltage: 3 V to 5 V
• Package / Case: SOIC-28
• Mounting Style: SMD/SMT
• Data Rom Size: 64 KB
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 21
• Program Memory Type: Flash

Flash Memory
This program sequence is repeated throughout the memory until all data is programmed.
112
10. Clear the PGM bit.*
11. Wait for a time, t
12. Clear the HVEN bit.
13. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address within the row address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for a time, t
9. Repeat step 7 and 8 until all the bytes within the row are programmed.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Care must be taken within the FLASH array
memory space such as the COP control register (COPCTL) at $FFFF.
It is highly recommended that interrupts be disabled during program/erase
operations.
Do not exceed t
cumulative high voltage programming time to the same row before next
erase. t
Refer to
The time between programming the FLASH address change (step 7 to
step 7), or the time between the last FLASH programmed to clearing the
PGM bit (step 7 to step 10) must not exceed the maximum programming
time, t
Be cautious when programming the FLASH array to ensure that
non-FLASH locations are not used as the address that is written to when
selecting either the desired row address range in step 3 of the algorithm or
the byte to be programmed in step 7 of the algorithm. This applies
particularly to $FFD4–$FFDF.
rcv
PROG
(typical 1μs), the memory can be accessed in read mode again.
HV
nvs
pgs
PROG
nvh
23.16 Memory
must satisfy this condition:
(min. 10μs).
(min. 5μs).
(min. 5μs).
maximum.
t
NVS
MC68HC908GR8 • MC68HC908GR4 Data Sheet, Rev. 7
(min. 30μs).
PROG
+ t
NVH
maximum or t
Characteristics.
+ t
PGS
+ (t
CAUTION
NOTE
NOTE
NOTE
NOTE
PROG
HV
maximum. t
x 32)
≤
t
HV
HV
maximum
is defined as the
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