IDT70T3339S133BFI IDT, Integrated Device Technology Inc, IDT70T3339S133BFI Datasheet - Page 16

• Manufacturer Part Number: IDT70T3339S133BFI
• Description: IC SRAM 9MBIT 133MHZ 208FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70T3339S133BFI

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 70T3339S133BFI; 800-1378

Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = V
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE
3. Addresses do not have to be accessed sequentially since ADS = V
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
reference use only.
ADDRESS
ADDRESS
0
DATA
, UB, LB, and ADS = V
DATA
DATA
DATA
UB, LB
UB, LB
CLK
R/
CE
CE
CLK
OUT
R/
CE
CE
OUT
OE
W
IN
W
IN
0
1
(3)
0
1
(3)
(1)
(1)
t
t
t
t
t
SB
SW
t
SC
SA
t
t
SB
SW
SC
SA
An
IL
An
; CE
t
t
t
t
HW
t
HC
HA
t
HB
t
t
HW
HC
HB
HA
t
t
CH1
t
CD1
t
CH1
1
CD1
, CNTEN, and REPEAT = V
t
t
CYC1
CYC1
READ
READ
t
CL1
t
CL1
Qn
Qn
An +1
An +1
t
DC
t
DC
t
CD1
t
OHZ
IH
.
t
Qn + 1
t
An + 2
SW
SD
Dn + 2
An + 2
IL
constantly loads the address on the rising edge of the CLK; numbers are for
t
t
HD
HW
6.42
NOP
16
t
CKHZ
(4)
t
WRITE
t
SW
SD
Dn + 2
An + 2
An + 3
Dn + 3
t
t
HD
HW
WRITE
Industrial and Commercial Temperature Ranges
An + 3
An + 4
t
CKLZ
t
OE
t
t
CD1
CD1
t
CKLZ
READ
Qn + 3
READ
Qn + 4
An + 4
An + 5
t
DC
t
DC
t
t
CD1
CD1
5652 drw 13
5652 drw 14
IL
)
(2)
,
,
(2)