CY7C1393CV18-250BZXC Cypress Semiconductor Corp, CY7C1393CV18-250BZXC Datasheet - Page 25

• Manufacturer Part Number: CY7C1393CV18-250BZXC
• Description: IC SRAM 18MBIT 250MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1393CV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document #: 001-07162 Rev. *C
27. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
28. Outputs are disabled (High-Z) one clock cycle after a NOP.
29. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.
R/W
CQ#
LD
CQ
Q
A
D
C
K
K
C#
1
NOP
t
KHCH
t KH
t KL
t
t SA
SC
A0
2
READ
(burst of 2)
t HC
t HA
t KHCH
t CYC
Figure 5. Read/Write/Deselect Sequence
A1
READ
(burst of 2)
3
t CQOH
t KHKH
t CLZ
t CO
A2
WRITE
(burst of 2)
4
Q00
t CCQO
t SD
t CQDOH
Q01
t CQOH
t HD
t CQD
D20
A3
WRITE
(burst of 2)
5
Q10
CY7C1392CV18, CY7C1992CV18
CY7C1393CV18, CY7C1394CV18
D21
t DOH
t CCQO
Q11
[27, 28, 29]
D30
t SD
READ
(burst of 2)
A4
6
t HD
t CHZ
t KH
t CQH
D31
DON’T CARE
t KL
NOP
7
t CQHCQH
t CYC
UNDEFINED
8
Q40
Page 25 of 30
t KHKH
Q41
[+] Feedback