CY7C1393CV18-250BZXC Cypress Semiconductor Corp, CY7C1393CV18-250BZXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1393CV18-250BZXC
• Description: IC SRAM 18MBIT 250MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1393CV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document #: 001-07162 Rev. *C
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: assumes a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[19]
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[11]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
= –(V
DDQ
DDQ
[18]
DD
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
(min) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
(max) = 0.95V or 0.54V
DDQ
DD
= 1/t
I
I
+ 0.3V
+ 0.3V
≤ V
≤ V
Test Conditions
CYC
DDQ
DDQ,
DD
Output Disabled
DDQ
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Operating Range
Commercial
Industrial
300 MHz
278 MHz
250 MHz
, whichever is smaller.
IH
Range
< V
CY7C1392CV18, CY7C1992CV18
CY7C1393CV18, CY7C1394CV18
DD
and V
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
–40°C to +85°C
< V
DDQ
DDQ
0°C to +70°C
V
V
DD
DDQ
REF
Ambient
–0.3
0.68
.
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
A
0.75
Typ
)
1.8
1.5
1.8 ± 0.1V
V
V
V
DD
DDQ
DDQ
V
V
DDQ
REF
[15]
V
Max
0.95
V
820
825
865
935
770
775
800
850
700
700
725
770
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 20 of 30
V
1.4V to
DDQ
V
DD
Unit
mA
mA
mA
[15]
μA
μA
V
V
V
V
V
V
V
V
V
[+] Feedback